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TPWR8004PL - Silicon N-channel MOSFET

Features

  • (1) High-speed switching (2) Small gate charge: QSW = 23 nC (typ. ) (3) Small output charge: Qoss = 85.4 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 0.65 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPWR8004PL DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial.

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Datasheet Details

Part number TPWR8004PL
Manufacturer Toshiba
File Size 570.24 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPWR8004PL Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS�-H) TPWR8004PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 23 nC (typ.) (3) Small output charge: Qoss = 85.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.65 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPWR8004PL DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2014-09 2023-12-18 Rev.6.0 TPWR8004PL 4.
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