Datasheet4U Logo Datasheet4U.com

TSB3055 - Silicon NPN Transistor

Features

  • . Convenient MOLD Package : Useless Insulation Bushing . High Gain at High Current : hFE=20~100 @ V CE=4V, I C=4A . Low Saturation Voltage : VC E(sat).

📥 Download Datasheet

Datasheet Details

Part number TSB3055
Manufacturer Toshiba
File Size 94.38 KB
Description Silicon NPN Transistor
Datasheet download datasheet TSB3055 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSB-1460A Unidirectional Back Electret Condenser Microphone JLI
TSB-L OPTICAL PRECISION TUBE SENSOR STM
TSB10N60M N-Channel MOSFET Truesemi
TSB10N60S N-Channel MOSFET Truesemi
TSB10N65M N-Channel MOSFET Truesemi

Other Datasheets by Toshiba

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON NPN TRIPLE DIFFUSED TYPE TSB3055 GENERAL PURPOSE TRANSISTOR POWER REGULATOR, SWITCHING AND SOLENOID Unit in mm 15.9MAX. 032±Q2 DRIVE APPLICATIONS. FEATURES . Convenient MOLD Package : Useless Insulation Bushing . High Gain at High Current : hFE=20~100 @ V CE=4V, I C=4A . Low Saturation Voltage : VC E(sat)
Published: |