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TTA1452B - Silicon PNP Transistor

Features

  • (1) Low collector-emitter saturation voltage: VCE(sat) = -0.4 V (max) (IC = -6 A , IB = -0.3 A) (2) High speed switching: tstg = 1 µs (typ. ) (3) Complementary to TTC3710B 3. Packaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25.
  • unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current.

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Datasheet Details

Part number TTA1452B
Manufacturer Toshiba
File Size 331.19 KB
Description Silicon PNP Transistor
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Full PDF Text Transcription

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Bipolar Transistors Silicon PNP Epitaxial Type TTA1452B TTA1452B 1. Applications • High-Current Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = -0.4 V (max) (IC = -6 A , IB = -0.3 A) (2) High speed switching: tstg = 1 µs (typ.) (3) Complementary to TTC3710B 3. Packaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4.
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