TTB1067B
TTB1067B is Silicon PNP Transistors manufactured by Toshiba.
Bipolar Transistors Silicon PNP Epitaxial Type (Darlington Transistor)
1. Applications
- Micromotor Drivers
- Hammer Drivers
- Switching
- Power Amplifiers
2. Features
(1) High DC current gain
: hFE = 2000 (min) (VCE = -2 V, IC = -1 A)
(2) Low collector-emitter saturation voltage : VCE(sat) = -1.5 V (max) (IC = -1 A, IB = -1 mA)
(3) plementary to TTD1509B
3. Packaging and Internal Circuit (Note)
1. Emitter 2. Collector 3. Base
TO-126N
Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical...
