TTC007 - NPN Transistor

Toshiba

Datasheet Details

Part number	TTC007
Manufacturer	Toshiba
File Size	195.40 KB
Description	NPN Transistor
Datasheet	TTC007 Datasheet
Additional preview pages of the TTC007 datasheet.

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Full PDF Text Transcription

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TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) • High-speed switching : tf = 85 ns (typ.) TTC007 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current DC IC Pulse ICP 1 A 2 1. BASE 2. EMITTER 3. COLLECTOR Base current IB 0.1 A t = 10 s PC Collector power dissipation 1.1 W DC (Note 1) 0.7 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC － JEITA － TOSHIBA 2-3S1C Weight: 0.

Published: Nov 11, 2013 |