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TOSHIBA Transistor Silicon NPN Epitaxial Type
TTC007
High-Speed Switching Applications DC-DC Converter Applications
• High DC current gain: hFE = 400 to1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) • High-speed switching : tf = 85 ns (typ.)
TTC007
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
Collector current
DC
IC
Pulse
ICP
1 A
2
1. BASE 2. EMITTER 3. COLLECTOR
Base current
IB
0.1
A
t = 10 s
PC
Collector power dissipation
1.1 W
DC
(Note 1)
0.7
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
－
JEITA
－
TOSHIBA
2-3S1C
Weight: 0.
TTC007 Datasheet
