TTC5460B
TTC5460B is Silicon NPN Transistor manufactured by Toshiba.
Bipolar Transistors Silicon NPN Triple-Diffused Type
1. Applications
- Dynamic Focus
- High-Voltage Switching
- High-Voltage Amplifiers
2. Features
(1) High collector voltage : VCEO = 800 V
3. Packaging and Internal Circuit (Note)
1. Emitter 2. Collector 3. Base
TO-126N
Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts.
©2016 Toshiba Corporation
Start of mercial production
2014-02
2016-02-05 Rev.1.0
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