TTD1415B Datasheet | Toshiba

Features (1) High DC current gain: h FE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 m A) (3) plementary to TTB1020B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015 Toshiba Corporation Start of mercial production 2012-09 2015-08-06 Rev.3.0 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Mounting torque (Tc = 25 ) (Note 1) (Note 1) VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg TOR 120 100 6 7 10 0.7 2 25 150 -55 to 150 0.6 W  Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . 5. Electrical Characteristics 5.1. Static Characteristics (Ta = 25  unless otherwise specified) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V(BR)CEO h FE(1) h FE(2) VCE(sat) VBE(sat) VCB = 120 V, IE = 0 A VEB = 6 V, IC = 0 A IC = 50 m A, IB = 0 A VCE = 3 V, IC = 3 A VCE = 3 V, IC = 6 A IC...