TTD1415B - Silicon NPN Transistor

Product Overview

Toshiba

Part number	TTD1415B
Manufacturer	Toshiba
File Size	181.73 KB
Description	Silicon NPN Transistor
Datasheet	TTD1415B Datasheet
Additional preview pages of the TTD1415B datasheet.

(1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015 Toshiba Corporation 1 Start of commercial production 2012-09 2015-08-06 Rev.3.0 TTD1415B 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltag.

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Published: May 8, 2021 |