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TW015N120C - Silicon N-channel MOSFET

Key Features

  • (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 11.7 mA) (6) Enhancement mode. 3. Packaging and Internal Circuit TO-247 1: Gate 2: Drain (heatsink) 3: Source ©2022 1 Toshiba Electronic Devices & Storage Corporation Start o.

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Datasheet Details

Part number TW015N120C
Manufacturer Toshiba
File Size 521.73 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TW015N120C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon Carbide N-Channel MOS TW015N120C TW015N120C 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 11.7 mA) (6) Enhancement mode. 3. Packaging and Internal Circuit TO-247 1: Gate 2: Drain (heatsink) 3: Source ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-07 2022-06-15 Rev.2.0 TW015N120C 4.