Datasheet4U Logo Datasheet4U.com

TW027N65C - Silicon N-channel MOSFET

Features

  • (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 27 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 3 mA) (6) Enhancement mode. 3. Packaging and Internal Circuit TO-247 1: Gate 2: Drain (heatsink) 3: Source ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of co.

📥 Download Datasheet

Datasheet preview – TW027N65C

Datasheet Details

Part number TW027N65C
Manufacturer Toshiba
File Size 520.53 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TW027N65C Datasheet
Additional preview pages of the TW027N65C datasheet.

📁 Similar Datasheet

Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon Carbide N-Channel MOS TW027N65C TW027N65C 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 27 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 3 mA) (6) Enhancement mode. 3. Packaging and Internal Circuit TO-247 1: Gate 2: Drain (heatsink) 3: Source ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-07 2022-06-15 Rev.1.0 TW027N65C 4.
Published: |