TW048N65C - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TW048N65C
Manufacturer	Toshiba
File Size	514.60 KB
Description	Silicon N-channel MOSFET
Datasheet	TW048N65C Datasheet
Additional preview pages of the TW048N65C datasheet.

(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 48 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1.6 mA) (6) Enhancement mode. 3. Packaging and Internal Circuit TO-247 1: Gate 2: Drain (heatsink) 3: Source ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of.

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Published: Feb 28, 2025 |