XCEZ30V Datasheet | Toshiba

Features (1) AEC-Q101 qualified (2) Small package (3) The typical voltage of VZ is accorded to E24 series. 3. Packaging and Internal Circuit XCEZ series 1: Cathode 2: Anode 4. Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Note Rating Unit Power dissipation PD (Note 1) 150 m W (Note 2) Junction temperature Tj - Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimensions of 16 mm2 Note 2: Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2 ©2025 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2025-06 2025-04-18 Rev.1.0 XCEZ series 5. Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25 - ) Type No. XCEZ5V6 XCEZ6V2 XCEZ6V8 XCEZ7V5 XCEZ8V2 XCEZ9V1 XCEZ10V XCEZ11V XCEZ12V XCEZ13V XCEZ15V XCEZ16V XCEZ18V XCEZ20V XCEZ22V XCEZ24V XCEZ27V XCEZ30V XCEZ33V XCEZ36V Electrostatic discharge voltage IEC61000-4-2 (Contact, Air) VESD(k V) (Note 1) ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±20 ±20 ±17...