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XPH1R104PS - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit XPH1R104PS SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-10 2021-09-30 Rev.2.0 XPH1R104PS 4. Absolute Maxim.

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Datasheet Details

Part number XPH1R104PS
Manufacturer Toshiba
File Size 593.37 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet XPH1R104PS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS�-H) XPH1R104PS 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit XPH1R104PS SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-10 2021-09-30 Rev.2.0 XPH1R104PS 4.