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XPH2R106NC - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit XPH2R106NC SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-11 2020-10-21 Rev.1.0 XPH2R106NC 4. Absolute Maximu.

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Datasheet Details

Part number XPH2R106NC
Manufacturer Toshiba
File Size 557.73 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet XPH2R106NC Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS�-H) XPH2R106NC 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit XPH2R106NC SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-11 2020-10-21 Rev.1.0 XPH2R106NC 4.