Datasheet4U Logo Datasheet4U.com

XPH2R404PS - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit XPH2R404PS SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-04 2022-04-08 Rev.1.0 XPH2R404PS 4. Absolute M.

📥 Download Datasheet

Datasheet Details

Part number XPH2R404PS
Manufacturer Toshiba
File Size 562.35 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet XPH2R404PS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Toshiba

Part Number Description
XPH2R404PB Silicon N-Channel MOSFET
XPH2R106NC Silicon N-Channel MOSFET
XPH13016MC Silicon P-Channel MOSFET
XPH1R104PS Silicon N-Channel MOSFET
XPH3R114MC Silicon P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-channel MOS (U-MOS�-H) XPH2R404PS 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit XPH2R404PS SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-04 2022-04-08 Rev.1.0 XPH2R404PS 4.