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XPQR3004PB - Silicon N-channel MOSFET

Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.23 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit XPQR3004PB 1: Gate 9: Drain (heatsink) 2 to 8: Source L-TOGLTM Note: L-TOGLTM is a trademark of Toshiba Electronic Devices & Storage Corporation. ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-.

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MOSFETs Silicon N-channel MOS (U-MOS�-H) XPQR3004PB 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers • DC-DC Converters 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.23 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit XPQR3004PB 1: Gate 9: Drain (heatsink) 2 to 8: Source L-TOGLTM Note: L-TOGLTM is a trademark of Toshiba Electronic Devices & Storage Corporation. ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-10 2023-06-09 Rev.4.0 XPQR3004PB 4.
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