XPW6R30ANB
XPW6R30ANB is N-channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-channel MOS (U-MOS-H)
1. Applications
- Automotive
- Motor Drivers
- Switching Voltage Regulators
2. Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 5.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
DSOP Advance(WF)M
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2019-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2019-11
2020-06-24 Rev.5.0
4....
