2SK367 Description
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Unit: mm High breakdown voltage: VGDS = −100 V (min) High input impedance:.
- Part: 2SK367
- Manufacturer: Toshiba (official site)
- Size: 628.86 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
2SK3673-01MR | N-Channel MOSFET Transistor |
Fuji Electric |
2SK3673-01MR | N-CHANNEL SILICON POWER MOSFET |
|
Fuji Electric |
2SK3674-01JS | Power MOSFET |
|
Inchange Semiconductor |
2SK3674-01L | N-Channel MOSFET Transistor |
|
Fuji Electric |
2SK3674-01L | Power MOSFET |