MT3S08T Description
¾ ¾ ¾ 0.55 Max 0.1 1 140 0.95 Unit mA mA ¾ pF Note: Cre is measured by 3 terminal method with capacitance bridge. Caution This device electrostatic sensitivity.
- Part: MT3S08T
- Manufacturer: Toshiba (official site)
- Size: 106.06 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| MT3S03AS | SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S03AT | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S03AU | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S04AE | VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| MT3S04AS | SILICON NPN EPITAXIAL PLANAR TYPE |