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TS128MEP6100 - 128MB 90PIN PC133 CL3 SDRAM

General Description

t e The TS128MEP6100 is a 32M bit x 32 Synchronous e memory modules.

The Dynamic RAM high-density h S of 4 pieces of CMOS 16Mx16bits TS128MEP6100 consists a t in TSOP-II 400mil packages on a 90-pin Synchronous DRAMs a printed circuitD board.

The TS128MEP6100 is a one Line Memory .

Key Features

  • Performance Range: PC133. Burst Mode Operation. Auto and Self Refresh. LVTTL compatible inputs and outputs. Single 3.3V + 0.3V power supply. MRS cycle with address key programs. Latency (Access from column address) Burst Length (1,2,4,8 & Full Page) Data Scramble (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock. w w . D w t a S a e h t e U 4 PCB: 09-1730 B . c D m o TS.

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Datasheet Details

Part number TS128MEP6100
Manufacturer Transcend Information
File Size 537.32 KB
Description 128MB 90PIN PC133 CL3 SDRAM
Datasheet download datasheet TS128MEP6100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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the use of system clock. I/O transactions are possible on every clock cycle. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Features • • • • • • Performance Range: PC133. Burst Mode Operation. Auto and Self Refresh. LVTTL compatible inputs and outputs. Single 3.3V + 0.3V power supply. MRS cycle with address key programs. Latency (Access from column address) Burst Length (1,2,4,8 & Full Page) Data Scramble (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. w w .D w t a S a e h t e U 4 PCB: 09-1730 B .c D m o TS128MEP6100 .c U 4 Description t e The TS128MEP6100 is a 32M bit x 32 Synchronous e memory modules.