TC1301
Key Features
- High Associated Gain: Ga = 10 dB Typical at 12 GHz
- High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz * * *
- Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 600 µm All-Gold Metallization for High Reliability 100 % DC Tested DESCRIPTION The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 4 V, IDS = 50 mA, f = 12GHz Associated Gain at VDS = 4 V, IDS = 50 mA, f = 12GHz Output Power at 1dB Gain Compression Point , f = 12GHz VDS = 6 V, IDS = 80 mA Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 80 mA Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 1.2 mA Drain-Gate Breakdown Voltage at IDGO =0.3 mA Thermal Resistance
