Datasheet Summary
REV.2_04/12/2004
Low Noise and Medium Power GaAs FETs
Features
Low Noise Figure: NF = 0.8 dB Typical at 12 GHz ..
- High Associated Gain: Ga = 10 dB Typical at 12 GHz
- High Dynamic Range: 1 dB pression Power P-1 = 24 dBm at 12 GHz
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- - Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 600 µm All-Gold Metallization for High Reliability 100 % DC Tested DESCRIPTION The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of...
