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TC1301 - Low Noise and Medium Power GaAs FETs

General Description

The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range.

Key Features

  • Low Noise Figure: NF = 0.8 dB Typical at 12 GHz www. DataSheet4U. com.
  • High Associated Gain: Ga = 10 dB Typical at 12 GHz.
  • High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz.
  • Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 600 µm All-Gold Metallization for High Reliability 100 % DC Tested.

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Datasheet Details

Part number TC1301
Manufacturer Transcom
File Size 241.07 KB
Description Low Noise and Medium Power GaAs FETs
Datasheet download datasheet TC1301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC1301 REV.2_04/12/2004 Low Noise and Medium Power GaAs FETs FEATURES Low Noise Figure: NF = 0.8 dB Typical at 12 GHz www.DataSheet4U.com • High Associated Gain: Ga = 10 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz • • • • Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 600 µm All-Gold Metallization for High Reliability 100 % DC Tested DESCRIPTION The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality.