TP120H058WS Overview
The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen III platform. It bines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen III GaN platform uses advanced epi simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss,...
TP120H058WS Key Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density