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TP120H058WS - 1200V GaN FET

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TP120H058WS 1200V GaN FET by Transphorm - Datasheet Preview — Datasheet preview – TP120H058WS

Datasheet Details

Part number	TP120H058WS
Manufacturer	Transphorm
File Size	1.41 MB
Description	1200V GaN FET
Datasheet	TP120H058WS Datasheet
Additional preview pages of the TP120H058WS datasheet.

Product details

Description

The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen III platform. AN0009: Recommended Ex

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Enhanced inrush current capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achieves.

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Published: Oct 26, 2024 |