Datasheet4U Logo Datasheet4U.com

TP90H180PS - 900V GaN FET

Description

The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS complian.

📥 Download Datasheet

Datasheet Details

Part number TP90H180PS
Manufacturer Transphorm
File Size 1.27 MB
Description 900V GaN FET
Datasheet download datasheet TP90H180PS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TP901C2 LOW LOSS SUPER HIGH SPEED RECTIFIER Fuji Electric
TP901C3 LOW LOSS SUPER HIGH SPEED RECTIFIER Fuji Electric
TP902C2 LOW LOSS SUPER HIGH SPEED RECTIFIER Fuji Electric
TP902C3 LOW LOSS SUPER HIGH SPEED RECTIFIER Fuji Electric
TP909FC-900 REVERSE CONDUCTING THYRISTORS PST

Other Datasheets by Transphorm

Part Number Description
TP90H050WS 900V GaN FET

Full PDF Text Transcription

Click to expand full text
TP90H180PS 900V GaN FET in TO-220 (source tab) Description The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Published: |