TP90H180PS Overview
The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device. It bines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
TP90H180PS Key Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS plian