Transys Electronics IN914
High Speed Silicon Switching Diode
| Part No. | IN914 |
|---|---|
| Datasheet | IN914 Download |
| Manufacturer |  Transys Electronics |
| Description | High Speed Silicon Switching Diode |
| Buy | Stock & Price |
FEATURES
Intended for General Purpose Application.ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL VR Reverses Voltage ( Continuous) VRRM Repetitive Peak Reverse Voltage Average Forward Current TA =25ºC IF (AV) IF (AV) TA =150ºC IF Forward Current (D.C.) IFRM Repetitive Peak Forward Current Non Repetitive Peak Surge Current IFSM tp=1sec Ptot Power Dissipation Tstg Storage Temperature Tamb Operating ambient TemperatureELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION VF Forward Voltage IF=10 IN914/916 IF=100mA, 1N914B IF=5mA, Reverse Breakdown Voltage Reverse Current V(BR)R IR IR=100µA VR= 20V VR= 75V VR= 20V, Tj=150ºC VALUE 75 100 75 10 75 225 500 250 -65 to +200 -65 to +175 UNIT V V mA mA mA mA mA mW ºC ºC MIN TYP MAX 1.0 1.0 0.72 UNIT V V V V nΑ µA 0.62 100 25 5 Diode Capacitance Reverse Recovery Time Cd trr VR=0, f=1MHz IF=10mA to IR=10mA RL=100 Ω Measured at IR=1mA IF=10mA to IR=60mA RL=100 Ω Measured at IR=1mA 2.5 8 pF ns 4 ns IN914, B IN916 250mW DO- 35 Glass Axial Package DO-35 Glass Axial Package A B A DIM A C D B NOTES 1.