Datasheet4U Logo Datasheet4U.com

1SS387 - High Speed SWITCHING Diodes

Key Features

  • Small package Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (10ms) Symbol VRM VR IFM IO Isurge Limits 85 80 200 100 1000 Junction temperature Tj 125 Unit V V mA mA mA ℃ Storage temperature Tstg -55~+125 ℃ Electrical Ratings @TA=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min. Typ. Max. Unit.

📥 Download Datasheet

Datasheet Details

Part number 1SS387
Manufacturer Transys
File Size 93.67 KB
Description High Speed SWITCHING Diodes
Datasheet download datasheet 1SS387 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
1SS387 Diode Toshiba Semiconductor
1SS387 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP
1SS387 Switching Diode MCC
1SS387 High Speed Switching Diode JCET
1SS387 High Speed Switching Diodes LGE

Other Datasheets by Transys

Part Number Description
1SS357 Schottky Diodes
1SS370 SWITCHING DIODE
1SS181 Plastic-Encapsulated Diodes
1SS187 SWITCHING DIODE
1SS193 Plastic-Encapsulated Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Transys Electronics LIMITED SOD-523 Plastic-Encapsulate Diodes 1SS387 High Speed SWITCHING Diodes FEATURES Small package Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (10ms) Symbol VRM VR IFM IO Isurge Limits 85 80 200 100 1000 Junction temperature Tj 125 Unit V V mA mA mA ℃ Storage temperature Tstg -55~+125 ℃ Electrical Ratings @TA=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min. Typ. Max. Unit Conditions VF1 0.62 V IF=1mA VF2 0.75 V IF=10mA VF3 1.2 V IF=100mA IR1 0.1 µA VR=30V IR2 0.5 µA VR=80V CT 3.