BAS40W-06 Datasheet | Transys

BAS40W SERIES SCHOTTKY DIODE Features Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 200 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 SOT-323 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm 0. 30 2. 00¡ À0. 05 1. 01 REF BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time Symbol V(BR) R IR VF CD trr Test conditions IR= 10µA VR=30V IF=1mA IF=40mA VR=0V, f=1MHz IF=10mA...