FEATURES
Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 70 mA Collector-base voltage VR: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-323 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 2. 30¡ À0. 05 1. 01 REF 0. 30 2. 00¡ À0. 05 1. 30¡ À0. 03 Unit: mm BAS70W Marking: K73 BAS70W-04 Marking: K74 BAS70W-05 Marking: K75 BAS70W-06 Marking: K76 ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time Symbol V(BR) R IR VF CD trr Test conditions IR= 10µA VR=50V IF=1mA IF=15mA VR=0V, f=1MHz IF=10mA through IR=10mA to IR=1mA MIN MAX 70 100 410 1000 2 5 UNIT V nA mV pF nS
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