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Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Diode
MMBD4448W SWITCHING DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃) Collector current
IO: 250 mA Collector-base voltage
VR: 75 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. 30¡ À0. 03
SOT-323
1. 25¡ À0. 05 2. 30¡ À0. 05
Unit: mm
0. 30 2. 00¡ À0. 05
1. 01 REF
Marking: KA3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current
Forward voltage
Diode capacitance Reverse recovery time
Symbol V(BR) R
IR
VF
CD t rr
Test conditions
IR= 10µA
VR=20V VR=75V IF=5mA IF=10mA IF=100mA IF=150mA VR=0V, f=1MHz
IF=IR=10mA Irr=0.1×IR ,RL=100Ω
MIN 75
MAX
0.025 2.5 0.72
0.855 1
1.25 4
4
Test period <3000µs.
MMBD4448W Datasheet