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AH312-S8G - High Linearity InGaP HBT Amplifier

General Description

The AH312-8SG is a high dynamic range driver amplifier in a low-cost surface mount package.

The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power.

Key Features

  • 400.
  • 2300 MHz.
  • +33 dBm P1dB at 2140 MHz.
  • +48 dBm Output IP3 at 2140 MHz.
  • 18 dB Gain at 900 MHz.
  • +5 V Single Positive Supply.
  • MTTF > 100 Years.
  • Lead-free/RoHS-compliant SOIC-8 SMT Package AH312-S8G 2 Watt, High Linearity InGaP HBT Amplifier SOIC-8 Package Functional Block Diagram General.

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Datasheet Details

Part number AH312-S8G
Manufacturer TriQuint Semiconductor
File Size 558.69 KB
Description High Linearity InGaP HBT Amplifier
Datasheet download datasheet AH312-S8G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Final stage amplifiers for Repeaters  Mobile Infrastructure  Driver stage for High Power Amplifier  LTE / WCDMA / EDGE / CDMA Product Features  400–2300 MHz  +33 dBm P1dB at 2140 MHz  +48 dBm Output IP3 at 2140 MHz  18 dB Gain at 900 MHz  +5 V Single Positive Supply  MTTF > 100 Years  Lead-free/RoHS-compliant SOIC-8 SMT Package AH312-S8G 2 Watt, High Linearity InGaP HBT Amplifier SOIC-8 Package Functional Block Diagram General Description The AH312-8SG is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a lead-free/RoHS-compliant SOIC-8 package.