AP561-F Datasheet | TriQuint Semiconductor

Applications - Small Cells / Repeaters / DAS - 3G / 4G Wireless Infrastructure - Wireless Backhaul - Portable Radios - LTE / WCDMA / CDMA Product Features - 700-2900 MHz - +39 d Bm P1d B - +12 V Supply Voltage - -50 d Bc ACLR @ 28d Bm Pout - 1.5% EVM @ 30 d Bm Pout - 13 d B Gain @ 2.6GHz - Fast Shut-Down Capability - Internal Active Bias and Temp pensation - Lead-free / Ro HS-pliant 0.7-2.9 GHz 8W HBT Power Amplifier 14 Pin 5x6 mm DFN Package Functional Block Diagram Pin 1 Reference Mark PIN_Vbias 1 NC 2 NC 3 RFin 4 RFin 5 RFin 6 NC 7 ACT IVE BIAS 14 PIN_Vpd 13 NC 12 NC 11 RFout/ Vcc 10 Rfout/ Vcc 9 Rfout/ Vcc 8 NC Backside Paddle - RF/DC GND General Description Pin Configuration The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage amplifier has 13 d B Gain, while being able to achieve high performance for 0.7- 2.9 GHz applications with up to +39 d Bm of pressed 1d B power. The AP561 uses a high reliability +12V In Ga P/Ga As HBT process technology. The device incorporates proprietary bias circuitry to pensate for variations in linearity and current draw over temperature. The device does not require any negative bias voltage; an internal active bias allows the AP561 to operate directly off a monly used +12V supply and has the added feature of a +5V power down control pin. Ro HS-pliant 5x6mm DFN package is surface mountable to allow for low manufacturing costs to the end user. Pin...