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CGB241 - 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

General Description

The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g.

Bluetooth class 1, or IEEE 802.11b).

Key Features

  • 2-stage Bluetooth InGaP HBT power amplifier.
  • Single voltage supply.
  • Wide operating voltage range 2.0 - 5.5 V.
  • POUT = 22.5 dBm at VC = 3.2 V.
  • Overall power added efficiency ( PAE ) typically 50%.
  • Analog power control with four power steps.
  • High PAE at low.
  • power mode.
  • High harmonic suppression typ. 35 dBc.
  • Easy external matching concept.
  • Thin Small Leadless Package (A = 2.6mm2).

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Datasheet Details

Part number CGB241
Manufacturer TriQuint Semiconductor
File Size 392.85 KB
Description 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Datasheet download datasheet CGB241 Datasheet

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Other Datasheets by TriQuint Semiconductor

Part Number Description
CGB240 2-Stage Bluetooth InGaP HBT Power Amplifier
CGB240B 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1, or IEEE 802.11b). Its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 22.5 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications.