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CGB241 - 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

Datasheet Summary

Description

The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g.

Bluetooth class 1, or IEEE 802.11b).

Features

  • 2-stage Bluetooth InGaP HBT power amplifier.
  • Single voltage supply.
  • Wide operating voltage range 2.0 - 5.5 V.
  • POUT = 22.5 dBm at VC = 3.2 V.
  • Overall power added efficiency ( PAE ) typically 50%.
  • Analog power control with four power steps.
  • High PAE at low.
  • power mode.
  • High harmonic suppression typ. 35 dBc.
  • Easy external matching concept.
  • Thin Small Leadless Package (A = 2.6mm2).

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Datasheet preview – CGB241

Datasheet Details

Part number CGB241
Manufacturer TriQuint Semiconductor
File Size 392.85 KB
Description 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Datasheet download datasheet CGB241 Datasheet
Additional preview pages of the CGB241 datasheet.

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Full PDF Text Transcription

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CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1, or IEEE 802.11b). Its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 22.5 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications.
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