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FP2189 Datasheet 1 Watt Gaas Hfet

Manufacturer: TriQuint Semiconductor

Overview: FP2189 1-Watt HFET Product.

General Description

The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package.

This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB pression, while providing 18.5 dB gain at 900 MHz.

The device conforms to WJ munications’ long history of producing high reliability and quality ponents.

Key Features

  • 50.
  • 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package.
  • MTTF >100 Years Product.

FP2189 Distributor