TriQuint Semiconductor FP2189
The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while providing 18.5 dB gain at 900 MHz. The device conforms to WJ Communications’ long history of producing high reliability and quality components.| Part No. | FP2189 |
|---|---|
| Datasheet | FP2189 Download |
| Manufacturer |  TriQuint Semiconductor |
| Description | 1 Watt GaAs HFET |
| Buy | Stock & Price |
FEATURES
●●
●
●
●
● 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package
● MTTF >100 Years Product
DESCRIPTION
The FP2189 has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free/green/RoHScompliant and green SOT-89 package. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required. Functional Diagram GND 4 1 RF IN 2 GND 3 RF OUTAPPLICATIONS
●●
●
●
●
● Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Function Input / Gate Output / Drain Ground Pin No. 1 3 2, 4 Specifications DC Parameter Saturated Drain Current, Idss (1) Transconductance, Gm Pinch Off Voltage, Vp (2) Typical Performance (5) Units Min mA mS V 445 Typ 615 28...
