• Part: FP2189
  • Description: 1 Watt GaAs HFET
  • Manufacturer: TriQuint Semiconductor
  • Size: 774.41 KB
Download FP2189 Datasheet PDF
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Datasheet Summary

1-Watt HFET Product Features - - - - - - 50 - 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-pliant SOT-89 Package - MTTF >100 Years Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB pression, while providing 18.5 dB gain at 900 MHz. The device conforms to WJ munications’ long history of producing high reliability and quality ponents. The FP2189 has an associated MTTF of greater than 100...