Datasheet4U Logo Datasheet4U.com

FP31QF - 2-Watt HFET

Description

The FP31QF is a high performance 2-Watt HFET (Heterostructure FET) in a low-cost lead-free/RoHScompliant 28-pin 6x6 mm QFN (Quad Flatpack, NoLead) surface-mount package.

Features

  • 50.
  • 4000 MHz.
  • 18 dB Gain @ 900 MHz.
  • +34 dBm P1dB.
  • +46 dBm Output IP3.
  • High Drain Efficiency.
  • Single Voltage Supply.
  • Robust 1000V ESD, Class IC.
  • Lead free/green/RoHS-compliant 6mm 28-pin QFN package.

📥 Download Datasheet

Datasheet preview – FP31QF

Datasheet Details

Part number FP31QF
Manufacturer TriQuint Semiconductor
File Size 514.26 KB
Description 2-Watt HFET
Datasheet download datasheet FP31QF Datasheet
Additional preview pages of the FP31QF datasheet.

📁 Similar Datasheet

  • FP31QF - 2-Watt HFET (WJ Communications)
  • FP310L100 - Contactless Potentiometer (Siemens Semiconductor Group)
  • FP312L100 - Contactless Potentiometer (Siemens Semiconductor Group)
  • FP300F60ADFF1 - FAST RECOVER DIODE MODULE (JILIN SINO)
  • FP301 - DC-DC Converter Applications (Sanyo Semicon Device)
  • FP302 - DC-DC Converter Applications (Sanyo Semicon Device)
  • FP303 - DC-DC Converter Applications (Sanyo Semicon Device)
  • FP304 - DC-DC Converter (Sanyo Semicon Device)
  • FP30D250E - Magneto Resistor (Siemens Semiconductors)
  • FP30R06KE3 - IGBT-Module (eupec)
Other Datasheets by TriQuint Semiconductor

    Full PDF Text Transcription

    Click to expand full text
    FP31QF 2-Watt HFET Product Features • 50 – 4000 MHz • 18 dB Gain @ 900 MHz • +34 dBm P1dB • +46 dBm Output IP3 • High Drain Efficiency • Single Voltage Supply • Robust 1000V ESD, Class IC • Lead free/green/RoHS-compliant 6mm 28-pin QFN package Applications • Mobile Infrastructure • CATV / DBS • W-LAN / ISM • RFID • Defense / Homeland Security • Fixed Wireless Product Description Functional Diagram GND GND GND GND GND GND GND The FP31QF is a high performance 2-Watt HFET (Heterostructure FET) in a low-cost lead-free/RoHScompliant 28-pin 6x6 mm QFN (Quad Flatpack, NoLead) surface-mount package. This device works optimally at a drain bias of +9 V and 450 mA to achieve +46 dBm output IP3 performance and an output power of +34 dBm at 1-dB compression.
    Published: |