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QPD0030 Datasheet

Manufacturer: TriQuint Semiconductor
QPD0030 datasheet preview

Datasheet Details

Part number QPD0030
Datasheet QPD0030-TriQuintSemiconductor.pdf
File Size 461.67 KB
Manufacturer TriQuint Semiconductor
Description RF Power Transistor
QPD0030 page 2 QPD0030 page 3

QPD0030 Overview

The QPD0030 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems.

QPD0030 Key Features

  • Operating Frequency Range: DC to 4 GHz
  • Operating Drain Voltage: 48 V
  • Maximum Output Power (PSAT): 49 W
  • Maximum Drain Efficiency: 72.5%
  • Efficiency-Tuned P3dB Gain: 21.7 dB
  • Surface Mount Plastic Overmold package

QPD0030 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
qorvo Logo QPD0030 GaN RF Power Transistor qorvo
TriQuint Semiconductor logo - Manufacturer

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QPD0030 Distributor

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