QPD0030 Datasheet PDF (RF Power Transistor) | Download TriQuint Semiconductor QPD0030

Part number	QPD0030
Manufacturer	TriQuint Semiconductor
File Size	461.67 KB
Description	RF Power Transistor
Datasheet	QPD0030 Datasheet

General Description

The QPD0030 is a wide band over-molded QFN discrete power amplifier.

The device is a single stage unmatched power amplifier transistor.

The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems.

Overview

Applications • W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Applications QPD0030 45 W, DC to 4 GHz 48V GaN RF Power Transistor 20 Pin.

Key Features

Operating Frequency Range: DC to 4 GHz.
Operating Drain Voltage: 48 V.
Maximum Output Power (PSAT): 49 W.
Maximum Drain Efficiency: 72.5%.
Efficiency-Tuned P3dB Gain: 21.7 dB.
Surface Mount Plastic Overmold package Functional Block Diagram General.

QPD0030 - RF Power Transistor

Datasheet Details

General Description

Overview

Key Features

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