T1G6001528-Q3 - 18 W GaN RF Power Transistor

Product Overview

TriQuint Semiconductor

Part number	T1G6001528-Q3
Manufacturer	TriQuint Semiconductor
File Size	662.56 KB
Description	18 W GaN RF Power Transistor
Datasheet	T1G6001528-Q3 Datasheet
Additional preview pages of the T1G6001528-Q3 datasheet.

The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.

Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 www. DataSheet. net/ 2 General.

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Published: Jun 21, 2012 |