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T1L2003028-SP - PowerbandTM LDMOS RF Power Transistor

Key Features

  • Exceptional Instantaneous band-width performance from 500MHz.
  • 2GHz.
  • Increased efficiency results in significant advantages.
  • Smaller and lighter systems.
  • Reduced system component costs.
  • Reduced energy consumption.
  • Typical Performance ratings.
  • Wide-Band 500MHz-2GHz (as tested in TriQuint Wideband Fixture).
  • 10dB gain.
  • 45% Efficiency.
  • 30Watt P1dB.
  • Narrow Band up to 2GHz.
  • 14dB gain.

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Datasheet Details

Part number T1L2003028-SP
Manufacturer TriQuint Semiconductor
File Size 405.33 KB
Description PowerbandTM LDMOS RF Power Transistor
Datasheet download datasheet T1L2003028-SP Datasheet

Full PDF Text Transcription for T1L2003028-SP (Reference)

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T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power tr...

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03028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across the entire band when operated in the TriQuint wide-band test fixture. The T1L2003028-SP can also be used in narrow band applications and is rated at 45Watts P1dB at 2GHz. Figure 1. Available Packages Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym R_ JC Value 1.3 Unit °C/W Table 2.

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