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T1P3002028-SP - PowerbandTM pHEMT RF Power Transistor

Features

  • Pulse Characterization.
  • Exceptional Instantaneous band-width performance from 500MHz.
  • 2GHz.
  • Increased efficiency results in significant advantages.
  • Smaller and lighter systems.
  • Reduced system component costs.
  • Reduced energy consumption.
  • Typical Performance ratings.
  • Wide-Band 500MHz-2GHz (as tested in TriQuint Wideband Fixture).
  • 10dB gain.
  • 50% Efficiency.
  • 20Watt P1dB θJC Thermal Resis- Vd = 10.

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Datasheet preview – T1P3002028-SP

Datasheet Details

Part number T1P3002028-SP
Manufacturer TriQuint Semiconductor
File Size 390.83 KB
Description PowerbandTM pHEMT RF Power Transistor
Datasheet download datasheet T1P3002028-SP Datasheet
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Full PDF Text Transcription

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T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across the entire band when operated in the TriQuint wide-band test fixture. The T1P3002028-SP can also be used in narrow band applications and is rated at 26Watts P1dB at 2GHz. Figure 1. Available Packages — Narrow Band up to 2GHz — 12dB gain — 58% efficiency — 26Watt P1dB Table 1. Maximum Ratings Sym V+ Vl+ PD TCH Parameter Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Power Dissipation Operating Channel Temperature Value 28 V –5V to 0V 5.
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