T1P3002028-SP - PowerbandTM pHEMT RF Power Transistor

TriQuint Semiconductor

Key Features

Pulse Characterization.
Exceptional Instantaneous band-width performance from 500MHz.
2GHz.
Increased eﬃciency results in signiﬁcant advantages.
Smaller and lighter systems.
Reduced system component costs.
Reduced energy consumption.
Typical Performance ratings.
Wide-Band 500MHz-2GHz (as tested in TriQuint Wideband Fixture).
10dB gain.
50% Eﬃciency.
20Watt P1dB θJC Thermal Resis- Vd = 10.

T1P3002028-SP powerbandtm phemt rf power transistor by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	T1P3002028-SP
Manufacturer	TriQuint Semiconductor
File Size	390.83 KB
Description	PowerbandTM pHEMT RF Power Transistor
Datasheet	T1P3002028-SP Datasheet

Other Datasheets by TriQuint Semiconductor

Part Number	Description
T1P2701012-SP	500 MHz - 3 GHz pHEMT RF Power Transistor

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T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across the entire band when operated in the TriQuint wide-band test ﬁxture. The T1P3002028-SP can also be used in narrow band applications and is rated at 26Watts P1dB at 2GHz. Figure 1. Available Packages — Narrow Band up to 2GHz — 12dB gain — 58% eﬃciency — 26Watt P1dB Table 1. Maximum Ratings Sym V+ Vl+ PD TCH Parameter Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Power Dissipation Operating Channel Temperature Value 28 V –5V to 0V 5.