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TGA1342-EPU - 2 -20 GHz Wideband AGC Amplifier

Datasheet Summary

Features

  • and Performance.
  • 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA Dimensions 3.378mm x 2.032mm Primary.

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Datasheet Details

Part number TGA1342-EPU
Manufacturer TriQuint Semiconductor
File Size 124.13 KB
Description 2 -20 GHz Wideband AGC Amplifier
Datasheet download datasheet TGA1342-EPU Datasheet
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Full PDF Text Transcription

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Advance Product Information 2 -20 GHz Wideband AGC Amplifier TGA1342-EPU Key Features and Performance • • • • • • 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA Dimensions 3.378mm x 2.032mm Primary Applications • • Typical Electrical Characteristics S21 Gain (dB) VD=5v Id=60ma Temp=25C 12.0 Gain (dB) 10.0 8.0 6.0 4.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Input Return Loss (dB) 0.0 -10.0 -20.0 -30.0 -40.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) S11 Input Return Loss (dB) VD=5v Id=60ma Temp=25C Wideband Gain Block Amplifier Wideband Low Noise Amplifier Noise Figure (dB) VD=6v Id=60ma Temp=25C Output Return Loss (dB) 6.0 5.0 4.0 3.0 2.0 1.0 2 4 6 8 10 12 14 16 18 Frequency (GHz) 0.0 -10.0 -20.0 -30.0 -40.
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