Datasheet Summary
..
Advance Product Information
February 7, 2006
- 15 GHz 4W Power Amplifier
Key Features
- -
- -
- -
Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm
0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm
Fixtured Measured Performance
Bias Conditions: Vd = 7V, Idq = 1.3A
30 25 20
Primary Applications
- Ku-Band VSAT Transmit
Gain (dB)
15 10 5 0 -5
-10 12 12.5 13 13.5 14 14.5 15 15.5 16
Frequency (GHz)
, q Bias Conditions: Vd = 7V, Idq = 1.3A 40 35
13GHz
Pout (dBm)
30 25 20 15 10 0 3 6 9 Pin (dBm) 12 15 18
14GHz 15GHz 15.5GHz 16GHz 16.5GHz...