TriQuint Semiconductor TGA2575
TGA2575 is a wideband power amplifier fabricated on TriQuint’s production-released 0.15um pwr-pHEMT process. The TGA2575 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Fully matched to 50 ohms, ROHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2575 is ideally suited to support both commercial and defense related opportunities.APPLICATIONS
●● Electronic warfare Communications Product
FEATURES
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● Frequency Range: 32.0 – 38.0 GHz Power: 36 dBm Psat PAE: 22% Gain: 18 dB Return Loss: 12 dB input, 12 dB output Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical Dimensions: 5.4 x 4.1 x 0.05 mm Functional Block Diagram Vg 6 TGA2575 Vd 5 1 RF In 4 RF Out 2 Vg 3 Vd
GENERAL DESCRIPTION
TriQuint’s Operating from 32GHz to 38GHz, it achieves 36dBm saturated output power, 22% PAE and 18dB small signal gain over most of the band. Bond Pad Configuration Bond Pad # 1 2, 6 3, 5 4 Symbol RF In Vg Vd RF Out Ordering Information Part No. TGA2575 . ECCN 3A001.b.2.dDESCRIPTION
Ka-band Power Amplifier Preliminary Data Sheet: Rev - 3/8/11 - 1 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® © 2011 TriQuint Semiconductor, Inc. Datasheet pdf - TGA2575 Ka-Band 4 Watt Power Amplifier SpecificationsABSOLUTE MAXIMUM RATINGS
Parameter Drain Voltage,Vd Gate Voltage,Vg Drain...