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TGA2623 Datasheet

Manufacturer: TriQuint Semiconductor
TGA2623 datasheet preview

Datasheet Details

Part number TGA2623
Datasheet TGA2623-TriQuintSemiconductor.pdf
File Size 518.99 KB
Manufacturer TriQuint Semiconductor
Description GaN Power Amplifier
TGA2623 page 2 TGA2623 page 3

TGA2623 Overview

TriQuint’s TGA2623 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2623 operates from 10 11GHz and provides a superior bination of power, gain and efficiency. Achieving 35W of saturated output power with 27.5dB of large signal gain and 47% poweradded efficiency, the TGA2623 provides the level of performance demanded by today’s system architectures.

TGA2623 Key Features

  • Frequency Range: 10
  • PSAT: 45.5dBm @ PIN = 18dBm
  • P1dB: 41dBm @ Midband
  • PAE: >47% @ PIN = 18dBm
  • Large Signal Gain: 27.5dB
  • Small Signal Gain: 35dB
  • Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical
  • Pulsed VD: PW = 100us and DC = 10%
  • Chip Dimensions: 5.0 x 4.86 x 0.10 mm
  • 11GHz and provides a superior bination of power, gain and efficiency. Achieving 35W of saturated output power with 27.5d
TriQuint Semiconductor logo - Manufacturer

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TGA2623 Distributor

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