TGA2623 Datasheet | TriQuint Semiconductor

Applications - X-band radar - 11GHz 35W GaN Power Amplifier Product Features - Frequency Range: 10 - 11GHz - PSAT: 45.5dBm @ PIN = 18dBm - P1dB: 41dBm @ Midband - PAE: >47% @ PIN = 18dBm - Large Signal Gain: 27.5dB - Small Signal Gain: 35dB - Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical - Pulsed VD: PW = 100us and DC = 10% - Chip Dimensions: 5.0 x 4.86 x 0.10 mm Functional Block Diagram 2 3 45 16 10 9 8 7 General Description TriQuint’s TGA2623 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2623 operates from 10 - 11GHz and provides a superior bination of power, gain and efficiency. Achieving 35W of...