TGA2710
TGA2710 is High Power Amplifier manufactured by TriQuint Semiconductor.
Features
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Frequency Range: 10.5 -12.0 GHz 38 d Bm Nominal Output Power 19 d B Nominal Gain Bias: 7-9V, 1.4A & 1.05A (~ 2A under RF drive) 0.25 um 3MI p HEMT Technology Chip Dimensions 3.52 x 2.61 x 0.10 mm (0.139 x 0.103 x 0.004 in)
Primary Applications
- - Point-to-Point Radio munications
Product Description
The Tri Quint TGA2710 is a High Power Amplifier MMIC for 10.5
- 12GHz applications. The part is designed using Tri Quint’s 0.25um 3MI p HEMT production process. The TGA2710 nominally provides 38 d Bm output power and 41% PAE for bias of 9V, 1.05A. The typical gain is 19d B. The part is ideally suited for low cost markets such as Point-to-Point Radio and munications. The TGA2710 is 100% DC and RF tested onwafer to ensure performance pliance. The TGA2710 has a protective surface passivation layer providing environmental robustness. Lead-Free & Ro HS pliant.
CW Saturated Output Power (d Bm)
Measured Fixtured Data
23 22 21 20 19 18 17 16 15 14 10.4 10.6 10.8
40 39 38 37 36 35 34 33 32 31 30 10.4 10.6 10.8
7V, 1.4A 8V, 1.4A 9V, 1.05A
CW Gain (d B)
11.2 11.4 11.6 11.8
Frequency (GHz )
7V, 1.4A 8V, 1.4A 9V, 1.05A
11.2 11.4 11.6 11.8
Frequency (GHz )
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice
Tri Quint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs. Web: .triquint.
Advance Product Information
September 1, 2005
TABLE I MAXIMUM RATINGS 1/ SYMBOL
Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
PARAMETER
VALUE
10 V -1 TO +0.5 V 3.85 A 85 m A 23 d Bm 11.3 W 150 C 320 0C -65 to 150 0C
NOTES
2/
2/ 3/...
