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TGA2976-SM - 10W Power Amplifier

Description

Qorvo’s TGA2976-SM is a wideband cascode amplifier fabricated on Qorvo’s production 0.25um GaN on SiC process.

The cascode configuration offers exceptional wideband performance as well as supporting 40 V operation.

Features

  • Frequency Range: 0.1.
  • 3.0 GHz.
  • PSAT: >40 dBm at PIN = 27 dBm.
  • PAE: 48% @ midband.
  • Large Signal Gain: >13 dB.
  • Small Signal Gain: >20 dB.
  • Bias: VD = 40 V, IDQ = 360 mA, VG1 = -2.4 V Typical, VG2 = +17.7 V Typical.
  • Wideband Flat Gain and Power.
  • Package Dimensions: 4.0 x 4.0 x 1.64 mm AC-QFN 4x4 mm 14L Functional Block Diagram 14 13 12 11 1 RF IN 2 3 10 9 RF OUT 8 4 567 General.

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Datasheet preview – TGA2976-SM

Datasheet Details

Part number TGA2976-SM
Manufacturer TriQuint Semiconductor
File Size 725.05 KB
Description 10W Power Amplifier
Datasheet download datasheet TGA2976-SM Datasheet
Additional preview pages of the TGA2976-SM datasheet.

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Full PDF Text Transcription

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Applications  Commercial and military radar  Communications  Electronic Warfare TGA2976-SM 0.1 – 3.0 GHz 10 W GaN Power Amplifier Product Features  Frequency Range: 0.1 – 3.0 GHz  PSAT: >40 dBm at PIN = 27 dBm  PAE: 48% @ midband  Large Signal Gain: >13 dB  Small Signal Gain: >20 dB  Bias: VD = 40 V, IDQ = 360 mA, VG1 = -2.4 V Typical, VG2 = +17.7 V Typical  Wideband Flat Gain and Power  Package Dimensions: 4.0 x 4.0 x 1.64 mm AC-QFN 4x4 mm 14L Functional Block Diagram 14 13 12 11 1 RF IN 2 3 10 9 RF OUT 8 4 567 General Description Pad Configuration Qorvo’s TGA2976-SM is a wideband cascode amplifier fabricated on Qorvo’s production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 40 V operation.
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