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TGA4509-EPU - 1W Power Amplifier

Key Features

  • TGA4509-EPU 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm (0.096 x 0.045 x 0.004 in) Primary.

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Datasheet Details

Part number TGA4509-EPU
Manufacturer TriQuint Semiconductor
File Size 136.68 KB
Description 1W Power Amplifier
Datasheet download datasheet TGA4509-EPU Datasheet

Full PDF Text Transcription for TGA4509-EPU (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TGA4509-EPU. For precise diagrams, and layout, please refer to the original PDF.

Advance Product Information Jan 17, 2005 27 - 31 GHz 1W Power Amplifier Key Features • • • • • • • • TGA4509-EPU 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25...

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TGA4509-EPU 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm (0.096 x 0.045 x 0.004 in) Primary Applications • • • • Point to Point Radio Point to Multi-point Radio LMDS Satellite Ground Terminal www.DataSheet4U.