TGA4516 Datasheet | TriQuint Semiconductor

Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier Key Features - - - - - - - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI MMW pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in Military Radar Systems Ka-Band Sat- Point to Point Radio Primary Applications - - - Product Description The TriQuint TGA4516 is a High Power MMIC Amplifier for Ka-band applications. The part is designed using TriQuint’s 0.15um power pHEMT process. The small chip size is achieved by utilizing TriQuint’s 3 metal layer interconnect (3MI) design technology that...