TGA4817-EPU
TGA4817-EPU is Wide Dynamic Range Differential TIA manufactured by TriQuint Semiconductor.
Advance Product Information September 27, 2004
10Gb/s Wide Dynamic Range Differential TIA
Key Features and Performance
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- - 3200Ω Single-Ended Transimpedance > 9 GHz 3d B Bandwidth > 1.6m A RMS Input Overload Current 11p A/ √Hz Input Noise Current Rx Signal Indicator (RSSI) 0.15µm 3MI p HEMT Technology Bias Conditions: 3.3V, 70m A Chip dimensions: 1.20 x 1.20 x 0.10 mm (0.047 x 0.047 x 0.004 in)
Preliminary Measured Performance
79 76 Differential Zt (d B-Ohm) 73 70 67 64 61 58 55 52 1
Differential Transimpedance S22 Non-Inverting Output S22 Inverting Output
Bias Conditions: V+=3.3V I+=70m A
CPIN = 0.2 p F RPIN = 15 Ohm LBW = 1 n H
0 -3 -6 -9 -12 -15 -18 -21 -24 -27 Output Return Loss (d B)
Primary Applications
- OC-192/STM-64 Fiber Optic Systems
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7 9 11 Frequency (GHz)
10.0Gb/s, 231-1 PRBS, IPD = 95 u A RMS
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1
Tri Quint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs. Web: .triquint.
Advance Product Information September 27, 2004 TGA4817-EPU
TABLE I MAXIMUM RATINGS Symbol V
+
Parameter 1/ Positive Supply Voltage Positive Supply Current (Quiescent) Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Value 5.5 V 80 m A 14.5 d Bm 0.44 W 117 °C 320 °C -65 to 117 °C
Notes 2/ 2/ 2/ 2/ 4/ 5/
I+ PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/
These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. binations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 °C, the median life is 1 E+6 hours. These ratings apply to each individual FET....
