TGF1350 Datasheet | TriQuint Semiconductor

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance - - - - - 0.5 um x 300 um FET 1.5 d B Noise Figure with 11d B Associated Gain at 10 GHz 2.5 d B Noise Figure with 7 d B Associated Gain at 18 GHz All-gold Metallization for High Reliability Recessed Gate Structure Description The Tri Quint TGF1350-SCC is a single-gate Ga As field-effect transistor (FET) used for low-noise applications DC to 18 GHz. Bond pad is gold plated for patibility with thermopression and thermosonic patibility wire-bonding processes. The TGF1350-SCC is readily assembled using automated equipment. Die attach should be acplished with conductive epoxy only. Eutectic attach is not remended . Tri Quint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: .triquint. Product Data Sheet TGF1350-SCC Tri Quint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: .triquint. Product Data Sheet TGF1350-SCC TYPICAL S-PARAMETERS Frequency (GHz) S 11 MAG S 21 ANG (°) MAG ANG (°) S 12 MAG ANG (°) MAG S 22 ANG (°) 2 .0 2 .5 3 .0 3 .5 4 .0 4 .5 5 .0 5 .5 6 .0 6 .5 7 .0 7 .5 8 .0 8 .5 9 .0 9 .5 1 0 .0 1 0 .5 1 1 .0 1 1 .5 1 2 .0 1 2 .5 1 3 .0 1 3 .5 1 4 .0 1 4 .5 1 5 .0 1 5 .5 1 6 .0 1 6 .5 1 7 .0 1 7 .5 1 8 .0 0 .9 8 0 .9 6 0 .9 3 0 .9 3 0 .9 0 0 .8 9 0 .8 8 0 .8 7 0 .8 5 0 .8 3 0 .8 2 0 .8 2 0 .8 1 0 .8 1 0 .8 0 0 .7 9 0 .7 8 0 .7 8 0 .7 7 0 .7 8 0 .7 7 0 .7 7 0 .7 6 0 .7 5 0 .7 5 0 .7 4 0 .7 4 0 .7 4 0 .7 3 0 .7 2 0 .7 3 0 .7 3 0 .7 4 - 28 - 36 - 44 - 51 - 56 - 60 -...