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TGF2021-04-SD - DC-4 GHz Packaged Power pHEMT

General Description

The TGF2021-04-SD is a high performance pseudomorphic High Electron Mobility GaAs Transistor (pHEMT) housed in a low cost SOT89 surface mount package.

The device’s ideal operating point for low noise operation is at a drain bias of 5 V and 150 mA.

Key Features

  • Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise.

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Datasheet Details

Part number TGF2021-04-SD
Manufacturer TriQuint Semiconductor
File Size 663.26 KB
Description DC-4 GHz Packaged Power pHEMT
Datasheet download datasheet TGF2021-04-SD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TGF2021-04-SD DC-4 GHz Packaged Power pHEMT Key Features • • Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Performance: • OTOI: 39.5 dBm • Noise Figure: 0.6dB • Gain: 16dB • P1dB: 26.5dBm • Input Return Loss: -8 dB • Output Return Loss: -18 dB • Bias: Vd = 5 V, Id = 150 mA, Vg = -0.8 V (Typical) 900 MHz Low Noise Application Board Performance Bias conditions: Vd = 5 V, Idq = 150 mA, Vg = -0.8 V Typical Primary Applications • • • • Cellular Base Stations WiMAX Wireless Infrastructure Low Noise Amplifiers www.DataSheet.net/ Product Description The TGF2021-04-SD is a high performance pseudomorphic High Electron Mobility GaAs Transistor (pHEMT) housed in a low cost SOT89 surface mount package.