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TGF2022-12 - DC - 20 GHz Discrete power pHEMT

General Description

The TriQuint TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC-20 GHz.

The TGF2022-12 is designed using TriQuint’s proven standard 0.35um power pHEMT production process.

The TGF2022-12 typically provides > 31 dBm of saturated output power with www.DataSheet4U.com power gain of 13 dB.

Key Features

  • and Performance Frequency Range: DC - 20 GHz > 31 dBm Nominal Psat 58% Maximum PAE 39 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability.

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Datasheet Details

Part number TGF2022-12
Manufacturer TriQuint Semiconductor
File Size 134.16 KB
Description DC - 20 GHz Discrete power pHEMT
Datasheet download datasheet TGF2022-12 Datasheet

Full PDF Text Transcription for TGF2022-12 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TGF2022-12. For precise diagrams, and layout, please refer to the original PDF.

Advance Product Information September19, 2005 DC - 20 GHz Discrete power pHEMT • • • • • • • • TGF2022-12 Key Features and Performance Frequency Range: DC - 20 GHz > 31 d...

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22-12 Key Features and Performance Frequency Range: DC - 20 GHz > 31 dBm Nominal Psat 58% Maximum PAE 39 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 1.2mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 90-150mA (Under RF Drive, Id rises from 90mA to 300mA) Chip Dimensions: 0.57 x 0.79 x 0.10 mm (0.022 x 0.031 x 0.004 in) Product Description The TriQuint TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC-20 GHz. The TGF2022-12 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2022-12 typically provides > 31 dBm of saturated outp

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