TGF2023-2-01 Datasheet | TriQuint Semiconductor

Features - Frequency Range: DC - 18 GHz - 38 d Bm Nominal PSAT at 3 GHz - 71.6% Maximum PAE - 18 d B Nominal Power Gain at 3 GHz - Bias: VD = 12 - 32 V, IDQ = 25 - 125 m A - Technology: TQGa N25 on Si C - Chip Dimensions: 0.82 x 0.66 x 0.10 mm Functional Block Diagram General Description The Tri Quint TGF2023-2-01 is a discrete 1.25 mm Ga N on Si C HEMT which operates from DC-18 GHz. The TGF2023-2-01 is designed using Tri Quint’s proven TQGa N25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 d Bm of saturated output power with power gain of 20.7 d B at 3 GHz. The maximum power added efficiency is 71.6 % which makes the TGF2023-2-01 appropriate for high efficiency applications. Lead-free and Ro HS pliant Pad Configuration Pad No. 1 2 Backside Symbol VG / RF IN VD / RF OUT Source / Ground Datasheet: Rev C 09-27-13 © 2013 Tri Quint Ordering...