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TGF2023-2-01 Datasheet

Manufacturer: TriQuint Semiconductor
TGF2023-2-01 datasheet preview

TGF2023-2-01 Details

Part number TGF2023-2-01
Datasheet TGF2023-2-01-TriQuintSemiconductor.pdf
File Size 2.20 MB
Manufacturer TriQuint Semiconductor
Description SiC HEMT
TGF2023-2-01 page 2 TGF2023-2-01 page 3

TGF2023-2-01 Overview

The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-01 is designed using TriQuint’s proven TQGaN25 production process.

TGF2023-2-01 Key Features

  • Frequency Range: DC
  • 18 GHz
  • 38 dBm Nominal PSAT at 3 GHz
  • 71.6% Maximum PAE
  • 18 dB Nominal Power Gain at 3 GHz
  • Bias: VD = 12
  • 32 V, IDQ = 25
  • 125 mA
  • Technology: TQGaN25 on SiC
  • Chip Dimensions: 0.82 x 0.66 x 0.10 mm

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