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TGF2023-2-01 Datasheet

Manufacturer: TriQuint Semiconductor
TGF2023-2-01 datasheet preview

Datasheet Details

Part number TGF2023-2-01
Datasheet TGF2023-2-01-TriQuintSemiconductor.pdf
File Size 2.20 MB
Manufacturer TriQuint Semiconductor
Description SiC HEMT
TGF2023-2-01 page 2 TGF2023-2-01 page 3

TGF2023-2-01 Overview

The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-01 is designed using TriQuint’s proven TQGaN25 production process.

TGF2023-2-01 Key Features

  • Frequency Range: DC
  • 18 GHz
  • 38 dBm Nominal PSAT at 3 GHz
  • 71.6% Maximum PAE
  • 18 dB Nominal Power Gain at 3 GHz
  • Bias: VD = 12
  • 32 V, IDQ = 25
  • 125 mA
  • Technology: TQGaN25 on SiC
  • Chip Dimensions: 0.82 x 0.66 x 0.10 mm

TGF2023-2-01 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Qorvo Logo TGF2023-2-01 SiC HEMT Qorvo
TriQuint Semiconductor logo - Manufacturer

More Datasheets from TriQuint Semiconductor

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Part Number Description
TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT
TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT
TGF2021-01 DC-12 GHz Discrete Power pHEMT
TGF2021-02 DC - 12 GHz Discrete power pHEMT

TGF2023-2-01 Distributor

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