TGF2023-2-01 Key Features
- Frequency Range: DC
- 18 GHz
- 38 dBm Nominal PSAT at 3 GHz
- 71.6% Maximum PAE
- 18 dB Nominal Power Gain at 3 GHz
- Bias: VD = 12
- 32 V, IDQ = 25
- 125 mA
- Technology: TQGaN25 on SiC
- Chip Dimensions: 0.82 x 0.66 x 0.10 mm
- Part: TGF2023-2-01
- Manufacturer: TriQuint Semiconductor
- Size: 2.20 MB
Other TGF2023-2-01 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Qorvo |
TGF2023-2-01 | SiC HEMT |
TGF2023-2-01 Description
The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-01 is designed using TriQuint’s proven TQGaN25 production process.