TGM2635-CP Description
TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 .qorvo. TGM2635-CP ® X-Band 100 W GaN Power Amplifier Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) −8 to −0 V Drain Current (ID) 16 A Gate Current (IG) Power Dissipation (PDISS), 85°C, Pulsed; PW = 100 us, DC = 10% Input Power (PIN), 50 Ω, 85°C , VD = 28 V, Pulsed;.
TGM2635-CP Key Features
- Frequency Range: 7.9
- 11 GHz
- PSAT: 50 dBm (PIN = 28 dBm)
- PAE: 35% (PIN = 28 dBm)
- Large Signal Gain: 22 dB (PIN = 28 dBm)
- Small Signal Gain: 26 dB
- Bias: VD = 28 V, IDQ = 1.3 A
- Package Dimensions: 19.05 x 19.05 x 4.52 mm
- Performance Under Pulsed Operation